Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | OKAJIMA MASASUE; MUTOU YUUHEI; MOGI NAOTO |
| 发表日期 | 1985-01-08 |
| 专利号 | JP1985001883A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a self-matching type semiconductor laser having excellent lateral mode control with a vapor phase growing method (MOCVD method) using organic metal by inclining the planar azimuth of the surface of a ground substrate having a striped groove from (100) surface. CONSTITUTION:A current narrowing layer 2 is epitaxially grown by an MO CVD method on a substrate 1 having the planar azimuth inclined at 2 degree in (011) direction from (100) surface, and selectively etched to form a striped groove 2a in (011) direction. A clad layer 3, an active layer 4, a clad layer 5 and a contacting layer 6 are sequentially grown by the MOCVD method. Stepwise difference is formed on the top of the groove 2a in the layer 4, and the thickness is largely increased. Accordingly, light enclosing effect increases, stable lateral mode control can be performed. The lateral mode control structure and the current narrowing structure can be performed in one step simultaneously, thereby largely simplifying the manufacturing steps. |
| 公开日期 | 1985-01-08 |
| 申请日期 | 1983-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78392]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | OKAJIMA MASASUE,MUTOU YUUHEI,MOGI NAOTO. Semiconductor laser device and manufacture thereof. JP1985001883A. 1985-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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