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文献类型：专利
| 作者 | NOMURA HIDENORI |
| 发表日期 | 1988-04-27 |
| 专利号 | JP1988020396B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To build-in a high sensitivity monitor without deterioration of laser operating characteristics in a monitor built-in semiconductor laser element by integrating a phototransitor structure containing a base region formed of a collector electrode and a photo-occluding layer isolated from a current injection electrode. CONSTITUTION:This laser is composed of an active region 11 having a buried structure formed on an n type semiconductor substrate 10, a clad region 12 made of a p type semiconductor, a photoabsorbing layer 13 on the region 12, an n type side electrode 19, a current injection electrode 17, and a collector electrode 18. The layer 13 is formed of n type reverse to the region 12 at the time of growing crystal, and a current injection stripe region 15 connected to the regions 14, 12 by thermal diffusion of the p type impurity is contained therein. The electrodes 17, 18 are electrically isolated via an insulating film 16. |
| 公开日期 | 1988-04-27 |
| 申请日期 | 1981-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78396]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NOMURA HIDENORI. -. JP1988020396B2. 1988-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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