Semiconductor light emitting element
文献类型：专利
| 作者 | OKUDA HAJIME; ISHIKAWA MASAYUKI; SHIOZAWA HIDEO |
| 发表日期 | 1989-09-28 |
| 专利号 | JP1989243598A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To enable the operation of the title element tat a high temperature and at a low threshold by employing GaInP as an active layer and setting an Al composition X of a P cladding layer of (AlxGa1-x)yIn1-yP to a specific range. CONSTITUTION:GaInP is employed as an active layer 104, and an Al composition X of a P cladding layer 105 of (AlxGa1-x)yIn1-yP is set within 0.65-0.75. A maximum oscillation temperature Tmax less than 70 deg.C where lasing is unstable corresponds to x less than 0.6. Further, with the Al composition X=0.8, the maximum oscillation temperature is lowered. Thus, the Al composition X may range 0.65-0.75. As a result, a band gap difference Eg between band gaps of the cladding layer and the active layer may be made greater, thereby increasing characteristic temperature of a semiconductor laser resulting in its low-threshold, high temperature operation. |
| 公开日期 | 1989-09-28 |
| 申请日期 | 1988-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78400]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | OKUDA HAJIME,ISHIKAWA MASAYUKI,SHIOZAWA HIDEO. Semiconductor light emitting element. JP1989243598A. 1989-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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