Semiconductor light-emitting element
文献类型：专利
| 作者 | KIMURA SOICHI; ISHIGURO NAGATAKA |
| 发表日期 | 1992-05-15 |
| 专利号 | JP1992142789A |
| 著作权人 | MATSUSHITA ELECTRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To enable a semiconductor light-emitting element to be easily controlled in a manufacturing process and improved in performance by a method wherein a first conductivity type semiconductor substrate and a first conductivity type second semiconductor layer are electrically connected together. CONSTITUTION:An N-type InP block layer 2, a P-type InP buffer layer 3, an InGaAsP active layer 4, and an N-type InP clad layer 5 are laminated through a first epitaxial growth on a P-type InP substrate 1 on which a mesa stripe 10 has been formed. The InGaAsP active layer 4 and the N-type InP clad layer 5 are selectively removed, and an N-type InP buried layer 6 is made to grow through a second epitaxial growth. A current is effectively injected into an oscillation region 10 from the mesa stripe 9 of the P-type InP substrate 1 passing through the P-type InP buffer layer 3. A current blocking region 11 is made to serve as a thyristor of a PNPQN structure which contains the InGaAsP active layer 4. Therefore, it is high in ON-state voltage and can be kept in an OFF-state at a high temperature operation or at a high output operation, so that a semiconductor light emitting element can be kept high in oscillation efficiency. |
| 公开日期 | 1992-05-15 |
| 申请日期 | 1990-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78401]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRON CORP |
| 推荐引用方式 GB/T 7714 | KIMURA SOICHI,ISHIGURO NAGATAKA. Semiconductor light-emitting element. JP1992142789A. 1992-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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