Semiconductor laser
文献类型：专利
| 作者 | KOJIMA KEISUKE; ARANISHI TOSHIO; HISAMA KAZUO |
| 发表日期 | 1987-01-08 |
| 专利号 | JP1987002585A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain highly reliable and stable single-mode oscillation as well as to improve the yield by periodically doping an impurity into the active layer in the propagational direction of light. CONSTITUTION:An impurity is selectively diffused onto the planar surface of an active layer 1 and an optical waveguide layer 3 using, for instance, a mask periodically provided with openings. Electrons 10 and holes 11 locally exist in the portion into which the impurity has been doped, and the gain is provided only in this portion. With this, when light propagates in the right and left directions, the light is amplified and simultaneously the light of the wavelength corresponding to this period is selectively reflected, and the single vertical mode oscillation is provided at the Bragg wavelength when the gain reaches a certain value. |
| 公开日期 | 1987-01-08 |
| 申请日期 | 1985-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78403]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOJIMA KEISUKE,ARANISHI TOSHIO,HISAMA KAZUO. Semiconductor laser. JP1987002585A. 1987-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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