Bistable semiconductor laser
文献类型：专利
| 作者 | YAMAGOSHI SHIGENOBU |
| 发表日期 | 1991-05-02 |
| 专利号 | JP1991105990A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Bistable semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a bistable semiconductor laser having a flat wavelength sensitivity characteristic by a method wherein a stripe-shaped active layer for laser oscillation and a stripeshaped active layer for light amplification are constituted in such a way that they are crossed obliquely in a saturable absorption region. CONSTITUTION:In a bistable semiconductor laser, a stripe-shaped active layer 12 for laser oscillation use and a stripe-shaped active layer 13 for light amplification use are crossed at an angle theta in a saturable absorption region 14. The stripe-shaped active layer 13 for light amplification use which is constituted in this manner and into which a control light is injected does not cause a reflection at an end face even when the layer is left as a cleavage surface without executing a reflectionless coating; it can be operated as a traveling-wave type light amplifier. When the control light is injected into the layer, a flat wavelength sensitivity characteristic without a resonance characteristic is obtained, an operation can be made extremely stable and a sensitivity is increased further because a light amplification function is available. |
| 公开日期 | 1991-05-02 |
| 申请日期 | 1989-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78415]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGOSHI SHIGENOBU. Bistable semiconductor laser. JP1991105990A. 1991-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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