Manufacture of semiconductor laser
文献类型：专利
| 作者 | HIRATA TAKAAKI |
| 发表日期 | 1990-12-20 |
| 专利号 | JP1990307286A |
| 著作权人 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form a nonabsorbing end face in semiconductor laser on an optical integrated circuit by disordering the end face part in quantum well structure by ion implantation and heat treatment. CONSTITUTION:An n-type buffer layer 2, an n-type clad layer 3, a GRIN layer 4, an SQW active layer 5, a GRIN layer 6, and a guide layer 7 are grown in this order on an n-type substrate Next, ion implantation is done for two regions to become end faces, and succeeding to this the guide layer 7 is etched and a rib-shaped wave guide path is formed, and a p-type clad layer 8 and a p-type cap layer 9 are grown. After this, one part each of the cap layer 9 and the clad layer 8 are etched so as to form ridge structure for current constriction, and after stacking an insulating layer 10 an upper electrode 11 is formed. A lower electrode 12 is formed at the rear of the substrate Lastly, the upper electrode 11 is removed corresponding to the region to become the end face, and it is cleft so that the disordered regions may be formed at both ends of a semiconductor laser. As disordering advances, effective well width decreases and the first quantum level changes, and band gaps increase. When disordering advances completely, the band gaps increase to the value of a barrier layer. |
| 公开日期 | 1990-12-20 |
| 申请日期 | 1989-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78431]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | HIRATA TAKAAKI. Manufacture of semiconductor laser. JP1990307286A. 1990-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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