Production of semiconductor device
文献类型：专利
| 作者 | YAMAZAKI SUSUMU |
| 发表日期 | 1986-06-26 |
| 专利号 | JP1986139025A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of semiconductor device |
| 英文摘要 | PURPOSE:To improve the yield ratio and to decrease the stress on the surface by using an alloy crystalline film, which is lattice-conformed to the constituent material for a compound semiconductor device, as a mask. CONSTITUTION:An n-InP buffer layer 2, an n-InGaAsP light absorption layer 4 and an n-InP multiplication layer 5 are grown on an n-InP base board Then, an AlInAs film 11 with film thickness of about 1,000Angstrom is epitaxially grown on the surface. This AlInAs film 11 is a film which is lattice-informed to the InP multiplication layer 5, having similar expansion coefficient. That is to say that it is widely known that the AlxGayIn1-x-yAs is lattice-informed to the InP, where y=0, and x=0.48 AlInAs are used for the surface protection film and selective growth protective mask. |
| 公开日期 | 1986-06-26 |
| 申请日期 | 1984-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78452]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAZAKI SUSUMU. Production of semiconductor device. JP1986139025A. 1986-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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