Semiconductor laser device
文献类型：专利
| 作者 | SUGINO TAKASHI; YOSHIKAWA AKIO; TAKEUCHI HIDEO; HATA NAOKUNI |
| 发表日期 | 1986-06-02 |
| 专利号 | JP1986115367A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To change a longitudinal mode into a multimode by forming a ridge section to a clad layer just above an inclined section in an active layer and limiting currents injected to the ridge section. CONSTITUTION:An n-Ga1-xAlxAs layer 2, a non-doped Ga1-yAlyAs active layer 3 and a p-Ga1-x'Alx'As layer 4 are grown continuously on an n-GaAs substrate The p-Ga1-x'Alx'As layer 4 is thickened at a stepped section, and a ridge section 8 is formed to the p-Ga1-x'Alx'As layer 4 just above an inclined section in the active layer. Grooves 9 are shaped on both sides of the ridge section 8 through etching. An n-GaAs layer 5 is grown on the p-Ga1-x'Alx'As layer 4, to which the ridge section 8 is formed, again, and zinc is diffused on the ridge section 8 from the surface and a zinc diffusion section 6 is made to reach the top surface of the ridge section 8. |
| 公开日期 | 1986-06-02 |
| 申请日期 | 1984-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78453]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SUGINO TAKASHI,YOSHIKAWA AKIO,TAKEUCHI HIDEO,et al. Semiconductor laser device. JP1986115367A. 1986-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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