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文献类型：专利
| 作者 | KUSUKI TOSHIHIRO |
| 发表日期 | 1990-04-04 |
| 专利号 | JP1990013470B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To suppress a leakage current and facilitate reduction of the threshold current of a laser by employing mixed solution of hydrogen bromide, hydrogen peroxide and water or mixed solution of hydrogen bromide, hydrogen peroxide and acetic acid as etchant. CONSTITUTION:An N-type InP buffer layer 2, an InGaAsP active layer 3 and a P-type InP cladding layer 4 are deposited over the whole surface of an N-type InP substrate Then, after an SiO2 mask 11 is formed on the top surface of a region where a mesa structure 5 is to be formed, mixed solution of 20cc of water or acetic acid 4cc (47wt%) of hydrogen bromide and 2cc (31wt%) of hydrogen peroxide is employed for etching both sides of the mask 11 until the active layer 3 is exposed on both sides to form the mesa structure 5. Side surfaces where a (111)A face does not exist are formed under a constricted part of the mesa structure 5, in other words on the sides where the side surface of the active layer 3 are exposed. Then current blocking layers 6 and 7 are deposited. After the mask 11 is removed, insulating layers 8 and electrodes 9 and 10 are formed and the device is completed by cleaving. |
| 公开日期 | 1990-04-04 |
| 申请日期 | 1986-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78456]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. -. JP1990013470B2. 1990-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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