Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | MIHASHI YUTAKA; KAKIMOTO SHIYOUICHI; MURAKAMI TAKASHI; TAKAMIYA SABUROU |
| 发表日期 | 1984-12-11 |
| 专利号 | JP1984219976A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device, oscillation threshold currents thereof are small and which has long life and equal characteristics, by forming a current block layer to a horizontal surface section except the stepped section of a substrate and giving current constriction function. CONSTITUTION:When a P type AlxGa1-xclad layer 4, a P type AlyGa1-yAs active layer 3, an N type AlxGa1-xAs layer 2 and an N type GaAs layer 5 are formed on an N type GaAs current block layer 12 and a P type GaAs substrate 11 with an opening section 13 for the layer 12 and positive voltage is applied to a P side electrode 8 and negative one to an N side electrode 7, P-N-P-N structure is formed where the N type block layer 12 interposes and functions as a current block layer, and currents flow only through the opening section 13. Holes are injected to an active region 10 from the P type clad layer 4 and electrons to it from the N type clad layer 2 and a recombined light emission is generated, an induced emission is started, and a laser oscillation is generated. Reactive currents passing through sections except the active region 10 can be reduced largely. |
| 公开日期 | 1984-12-11 |
| 申请日期 | 1983-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78462]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA,KAKIMOTO SHIYOUICHI,MURAKAMI TAKASHI,et al. Semiconductor laser device and manufacture thereof. JP1984219976A. 1984-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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