Semiconductor laser device
文献类型：专利
| 作者 | MOTOHARU, MIYASHITA; HIROTAKA, KIZUKI; YASUAKI, YOSHIDA; YUTAKA, MIHASHI; YASUTOMO, KAJIKAWA; SHOICHI, KARAKIDA; YUJI, OHKURA |
| 发表日期 | 1997-04-09 |
| 专利号 | GB2305542A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A method of fabricating a semiconductor laser device includes successively forming an active layer 3 and upper clawing layers 4, 6 on a lower cladding layer 2 and etching away portions except regions of the upper cladding layers 4, 6 where a current flows to form a stripe-shaped ridge structure. The etching is performed using a first etching stopper layer 14 comprising Al x Ga 1-x As for which 0 < x * less than or equal to * * solidtriangle; up triangle filled* 3 and a second etching stopper layer 15 comprising Al y Ga 1-y As for which y * <------ solidus * * solidtriangle; up triangle filled* 6. The second upper cladding layer 6 comprises Al z Ga 1-z As for which z * less than or equal to * * solidtriangle; up triangle filled* 6. A current blocking layer 9 buries portions of the second upper cladding layer 6 and the second etching stopper layer 15 which remain after the etching.; The current blocking layer has reduced crystal defects due to its growth on the layer 14. |
| 公开日期 | 1997-04-09 |
| 申请日期 | 1995-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78475]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MOTOHARU, MIYASHITA,HIROTAKA, KIZUKI,YASUAKI, YOSHIDA,et al. Semiconductor laser device. GB2305542A. 1997-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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