Manufacture of semiconductor laser
文献类型：专利
| 作者 | MOGI NAOTO; OKAJIMA MASASUE; MUTOU YUUHEI |
| 发表日期 | 1985-01-09 |
| 专利号 | JP1985003176A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve the reproducibility of impurity concentration in a p type GaAlAs clad layer, and to obtain a laser having excellent characteristics by previously doping a p type impurity into an n type GaAs current stopping layer on the p type clad layer when an n type GaAlAs clad layer, an un-doped GaAl As active layer, the p type clad layer and the n type current stopping layer are laminated on an n type GaAs substrate and grown. CONSTITUTION:An n type Ga0.55Al0.45As clad layer 12, an un-doped Ga0.85Al0.15 As actie layer 13 and a p type Ga0.55Al0.45As clad layer 14 are laminated on an n type GaAs substrate 11 of a (100) face orientation and grown in an epitaxial manner. An n type GaAs current stopping layer 5 from which a striped section is removed is formed on the layer 14, but a p type impurity is made previously contain in the layer 15 at that time. Accordingly a p type impurity, which diffuses from the p type clad layer 14 and is lost in a growth process, is compensated by the p type impurity in the layer 15, and the reproducibility of impurity concentration in the layer 14 is made sure. |
| 公开日期 | 1985-01-09 |
| 申请日期 | 1983-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78489]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,OKAJIMA MASASUE,MUTOU YUUHEI. Manufacture of semiconductor laser. JP1985003176A. 1985-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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