Manufacture of semiconductor laser
文献类型：专利
| 作者 | WATANABE YUKIO; OKUDA HAJIME; SHIOZAWA HIDEO; ISHIKAWA MASAYUKI |
| 发表日期 | 1989-07-24 |
| 专利号 | JP1989184976A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable the formation of a laser of this design excellent in productivity at a low cost by a method wherein one or more layers different from each other in composition are made to grow thicker than the width as ions are implanted on an ohmic contact layer, the layers are subjected to an etching to form a mesa, and ions are implanted using the mesa as a mask. CONSTITUTION:A GaAs ohmic contact layer 5 is formed, and an InGaAlP layer 6 is made to grow as an ion implanting mask layer. Next, a required pattern is formed using a photoresist, and the InGaAlP mask layer is etched through it as a mask so far as to make the etching reach to the GaAs ohmic contact layer 5 using a hot phosphoric acid for the formation of a mesa formed of only an InGaAlP layer. By these processes, the surface of the GaAs ohmic contact layer 5 can be exposed at both sides of the mesa, so that ions can be uniformly implanted. Next, ions (protons) are implanted using the mesa of InGaAlP as a mask. As a result, ions are implanted into the p-InGaAlP clad layer 4 as deep as 0.2mum or so at both the sides of mesa, whereas ions are not implanted so far as to reach to the GaAs ohmic contact layer 5. |
| 公开日期 | 1989-07-24 |
| 申请日期 | 1988-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | WATANABE YUKIO,OKUDA HAJIME,SHIOZAWA HIDEO,et al. Manufacture of semiconductor laser. JP1989184976A. 1989-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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