Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SASAI YOICHI; ISHINO MASATO; MATSUI YASUSHI; ODANI JIYUN; OGURA MOTOTSUGU; SERIZAWA AKIMOTO |
| 发表日期 | 1990-03-01 |
| 专利号 | JP1990062091A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve optical coupling efficiency and hence assure a low threshold current by flattening the surface of an optical coupling section of an IPC (integrated passive cavity) laser as a composite resonator type semiconductor laser. CONSTITUTION:There are formed by a first growing process a substrate 1, an optical guide layer 2, a separation layer 3, an active layer 4, and an optical confinement layer 5. A buried layer is formed on an epitaxial wafer subjected to mesa formation by a second growing process. The buried layer comprises a P type InP layer 6, an n type InP layer 7, a P type InP layer 8, and a P type InGaAsP layers. The optical confinement layer 5 is thick. Accordingly, when the second growing process is effected by a liquid phase growing process, the InP layer 6 and the InP layer 7 are not grown on a mesa upper surface if mesa stripe width W is narrower as being less than 5mum. Thus, the surface in the vicinity of the mesa upper portion is flattened. Hereby, optical coupling efficiency is improved and hence a low threshold current is assured. |
| 公开日期 | 1990-03-01 |
| 申请日期 | 1988-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78512]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SASAI YOICHI,ISHINO MASATO,MATSUI YASUSHI,et al. Semiconductor laser and manufacture thereof. JP1990062091A. 1990-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。