Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KUBO MINORU; ONAKA SEIJI; HASE NOBUYASU |
| 发表日期 | 1986-08-25 |
| 专利号 | JP1986191092A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To remove stress in epitaxial growing, by forming an active layer and a clad layer on a substrate, performing mesa etching for a stripe shape and selective etching of the active layer, increasing temperature, and performing mass transport. CONSTITUTION:On an N-type InP substrate 1, an N-type InP buffer layer 2, an InGaAsP active layer 3 and a P-type InP clad layer 4 are epitaxially grown. Then the clad layer 4 and the active layer 3 are etched. The active layer 3 is further etched to the width desired for the active layer selectively. Then temperature is increased in an H2 or PH3 atmosphere. The clad layer 4 is deformed by a mass transport. Thereafter, a P-type InP clad layer 7 and an N-type InP clad layer 8 are epitaxially grown. A current injecting region 10 is formed by P-type diffusion or ion implantation. Finally, electrodes 9 are attached. |
| 公开日期 | 1986-08-25 |
| 申请日期 | 1985-02-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78518]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUBO MINORU,ONAKA SEIJI,HASE NOBUYASU. Manufacture of semiconductor laser device. JP1986191092A. 1986-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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