半導体発光装置
文献类型：专利
| 作者 | 菅原 充 |
| 发表日期 | 1994-11-30 |
| 专利号 | JP1994097707B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置 |
| 英文摘要 | PURPOSE:To improve heat dissipation, by providing a semiconductor layer having an opposite type of conductivity to that of a high-resistance buried layer in contact with the surface of a mesa and further providing an electrode formed on the semiconductor layer to be contacted. CONSTITUTION:An N-type InGaAsP active layer 8 and a P-type InP clad layer 9 are grown in that order on an N type InP substrate 7. An insulation film of SiO2 is formed and then etched to provide therein an aperture required for forming grooves in which high-resistance layers are to be buried. Using this insulation film having the aperture as a mask, the structure is etched to form grooves 10 reaching the N type InP substrate 7. After that, N type InP high- resistance layers 10A are buried within the grooves 10 by means of the VPE process. The insulation film of SiO2 used as the mask is removed. A P type InP layer 11 is formed and then an insulation film of SiO2 is further formed. The insulation film is patterned to form a masking film. A P-side electrode 12 and an N-side electrode 13 are formed. A semiconductor light-emitting device produced in this manner can have good heat dissipation when mounted on a heat sink. |
| 公开日期 | 1994-11-30 |
| 申请日期 | 1986-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78522]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 菅原 充. 半導体発光装置. JP1994097707B2. 1994-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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