Semiconductor laser device
文献类型：专利
| 作者 | ONODERA NORIAKI |
| 发表日期 | 1987-07-14 |
| 专利号 | JP1987158381A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a desired window effect on the end surface of a laser active layer by forming irregularities to the surface of a substrate, laminating a plurality of semiconductor layers on the surface of the irregularities and using one layer in the semiconductor layers as the active layer emitting light while employing another one layer as an optical waveguide layer. CONSTITUTION:Band-shaped projections 11a with approximately rectangular sections are shaped onto the upper surface of an N-type GaAs substrate 11 through a photolithographic technique, and an N-type Al0.4Ga0.6As clad layer 12, a GaAs active layer 13, a P-type Al0.4Ga0.6As clad layer 14, a P-type Al0.1 Ga0.9As waveguide layer 15, a P-type Al0.4Ga0.6As clad layer 16 and a P-type GaAs cap layer 17 are grown on the substrate 11 in succession through an epitaxial growth method. An insulating layer 18 is formed, a striped opening 18a for confining currents is bored to the insulating layer 18, and a P-type ohmic electrode 19 is shaped. On the other hand, an N-type ohmic electrode 20 is formed onto the back of the substrate 11, and the whole is cloven along a line X-X, thus completing a semiconductor laser device. |
| 公开日期 | 1987-07-14 |
| 申请日期 | 1985-12-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78527]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | ONODERA NORIAKI. Semiconductor laser device. JP1987158381A. 1987-07-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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