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文献类型：专利
| 作者 | IWATA HIROSHI |
| 发表日期 | 1993-01-20 |
| 专利号 | JP1993004833B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser whose oscillation threshold current is small, by forming a quatum well layer composed of a light emitting quantum well region which is a stripe type in the longitudinal direction of a resonator and a confinement region neighbouring with the light emitting quantum well region, and making the layer of the light emitting quantum well region thicker than the layer or the confinement region. CONSTITUTION:One or more quantum well layers 5 are provided, each of whose thickness is about a de Broglie wavelength. The quantum well layer 5 is composed of a light emitting quantum well region 5a which is a stripe type in the longitudinal direction or a resonator and a confinement region 5b neighbouring with the light emitting quantum well region 5a. The layer of the light emitting quantum well region 5a is thicker than the layer of the confinement region 5b. For example, on an n-type GaAs substrate 1, the following are formed: an n-type buffer layer 2, an n-type Al0.7Ga0.3As clad layer 3, an Al0.3Ga0.7 As light guide layer 4, a quantum well layer 5 composed of a stripe-type light emitting quantum well region 5a of GaAs, and a confinement region 5b of GaAs an Al0.3Ga0.7As light guide layer 6, a p-type Al0.7Ga0.3As clad layer 7, and a p-type GaAs cap layer 8, etc. |
| 公开日期 | 1993-01-20 |
| 申请日期 | 1986-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78531]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | IWATA HIROSHI. -. JP1993004833B2. 1993-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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