Manufacture of semiconductor laser
文献类型：专利
| 作者 | JINDOU MASAAKI; KAWANO HIDEO; AMANO TOSHIMASA |
| 发表日期 | 1984-07-11 |
| 专利号 | JP1984119781A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable to form flatly an epitaxial layer in a later process by a method wherein the side surface and the upper surface are cleaned with a solution containing an element whose standard oxidation-reduction potential is negative and absolute value is 1 or more, after mesa etching. CONSTITUTION:An N type clad layer 2, an N type guide layer 3, an active layer 4, and a P type clad layer 5 are formed on an N type GaAs substrate Next, a mesa is formed by selective etching from the layer 5 to the depth reaching the substrate Then, before the second liquid growing process, the oxide layer of the mesa is removed by cleaning the side surface and the upper surface of the mesa with the solution containing the element such as Al, Mg, and Be whose standard oxidation-reduction potential is negative and absolute value is 1 or more. Thereafter, a P type layer 6, an N type layer 7, a P type layer 8, and a P type layer 9 are successively formed by the second liquid epitaxial growth. This process enables to form current block layers 6 and 7 with good controllability of shape, further thereafter form the epitaxial layer flatly over the entire surface of the crystal. Thereby, the efficiency of thermal dissipation can be improved by tightly contacting an electrode on a heat sink. |
| 公开日期 | 1984-07-11 |
| 申请日期 | 1982-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78553]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | JINDOU MASAAKI,KAWANO HIDEO,AMANO TOSHIMASA. Manufacture of semiconductor laser. JP1984119781A. 1984-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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