半導体レーザ
文献类型：专利
| 作者 | 斉藤 勝利; 辻 伸二; 大石 昭夫; 茅根 直樹 |
| 发表日期 | 1994-10-12 |
| 专利号 | JP1994080856B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To reduce the electrostatic capacitance produced by an electrode provided on the main surface side, by a method wherein the electrode structure constructed of an ohmic electrode having a specific width, one or more lead terminals to supply power to this electrode, and one or more bonding pads to connect lead wires for external connection is used to excite the active region. CONSTITUTION:A diffraction grating is formed in the surface of an n type InP substrate 40, and an InGaAsP guide layer 41, an InGaAsP active layer 42, an InGaAsP antimeltback layer 43, a p type InP clad layer 44, and a p- InGaAsP surface layer 45 are laminated thereon. The guide, active, antimeltback, clad, and surface layers are constructed in stripe form by selective etching, and the width of the active layer is adjusted at about 6mum. The stripe mesa part including the active layer 42 is filled with the liquid epitaxial grown layers of a p-InP layer 46, an n-InP layer 47, and an InGaAsP surface layer 48, resulting in the construction of a DFB type laser of BH structure. The substrate is provided with an ohmic electrode 49 made of Au-Ge-Ni-Au. |
| 公开日期 | 1994-10-12 |
| 申请日期 | 1984-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78555]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | 斉藤 勝利,辻 伸二,大石 昭夫,等. 半導体レーザ. JP1994080856B2. 1994-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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