Semiconductor laser
文献类型：专利
| 作者 | YAMAMOTO SABURO; MORIMOTO TAIJI; MIYAUCHI NOBUYUKI; SAKII SHIGEKI; HAYASHI HIROSHI |
| 发表日期 | 1986-04-08 |
| 专利号 | JP1986067982A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the laser capable of making a stable basic lateral mode oscillation while keeping a state of high light output by a method wherein two grooves along the stripe-form channel groove which will become a current path of a semiconductor laser element are formed in the central part of said groove and only this part is used for a current paths and all of other parts are covered with a current preventing layer. CONSTITUTION:In the stripe groove 28 part which will become a current path of a surface of a P type GaAs substrate 14 having a (100) plane, two V-shaped stripe grooves 29 along direction are formed in the predetermined intervals by etching. Nextly an N type GaAs current preventing layer 15 is grown thinly in the stripe groove 28 part and thickly in the region surrounding said part. The stripe groove 29 part is left to be exposed. After that, a P type GaAlAs clad layer 16, a P type GaAlAs active layer 17, an N type GaAlAs clad layer 18, and an N type GaAs cap layer 19 are laminated and grown over the whole surface with filling the groove 29. The layer 19 is coated with an N-side electrode 20 of Au-Ge-N and a back surface of the substrate 14 is coated with a P-side electrode 21 of Au-Cr. |
| 公开日期 | 1986-04-08 |
| 申请日期 | 1984-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78559]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,MORIMOTO TAIJI,MIYAUCHI NOBUYUKI,et al. Semiconductor laser. JP1986067982A. 1986-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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