Semiconductor laser element
文献类型：专利
| 作者 | INOU, YUICHI; SHIMOYAMA, KENJI; SAKAMOTO, ITARU; GOTO, HIDEKI |
| 发表日期 | 1994-04-06 |
| 专利号 | EP0590951A2 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | 57 A semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order, or in reverse order on a semiconductor substrate, wherein (a) the refractive index of the optical guiding layer is larger than both refractive indexes of the first and second cladding layers, and (b) the refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer which element also comprises a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers, said burying layer being disposed on side faces other than the laser-emitting faces of the optical guiding layer and the active layer. |
| 公开日期 | 1994-04-06 |
| 申请日期 | 1993-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78573]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | INOU, YUICHI,SHIMOYAMA, KENJI,SAKAMOTO, ITARU,et al. Semiconductor laser element. EP0590951A2. 1994-04-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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