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文献类型：专利
| 作者 | MITO IKUO; KITAMURA MITSUHIRO; KAEDE KAZUHISA; KOBAYASHI ISAO |
| 发表日期 | 1986-11-15 |
| 专利号 | JP1986052999B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve yield by inclusion of the first epitaxial growth process which grows a multi-layer film structured wafer on an N type InP substrate, a process through which a mesa stripe is built and the second epitaxial growth process. CONSTITUTION:The first epitaxial growth process through which a multi-layer film structured wafer consisting of semiconductor layers which include an In1-xGax As1-yPy active layer is built on an N type InP substrate 20. A process through which a mesa stripe 26 is built by applying mesa etching to be extended deeper than the active layer. The following second epitaxial growth process through which a P type InP current blocking layer 27, an N type InP current confining layer 28 and a P type InP buried layer 29 are laminted except the upper surface of the mesa stripe. Through these processes yield in manufacturing InGaAsP BH LD is improved. |
| 公开日期 | 1986-11-15 |
| 申请日期 | 1980-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78577]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | MITO IKUO,KITAMURA MITSUHIRO,KAEDE KAZUHISA,et al. -. JP1986052999B2. 1986-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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