Semiconductor light emitting device
文献类型：专利
| 作者 | SHIMA KATSUTO; OOSAKA SHIGEO; HANAMITSU KIYOSHI; SEKI KATSUJI |
| 发表日期 | 1983-07-12 |
| 专利号 | JP1983116786A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To enable effective implantation of carrier and to preferably stabilize a mode by utilizing the decrease in the refractive index by forming a p type diffused region in a semi-insulating substrate and forming a p-n homojunction and heterojunction in 3 directions in an active layer. CONSTITUTION:A p type Ga1-yAlyAs clad layer 2, an n type GaAs active layer 3, a Ga1-xAlxAs clad layer 4, an n type GaAs cap layer 5 and a stripe part 7 remain on a semi-insulating substrate 1, and a p type region 6 which reaches the layer 2 is formed from the surface. When a voltage is applied between the p-side electrode 8 and the n-side electrode 9, Holes are implanted from 3 directions of a homojunction produced by forming a p type region 6 and a heterojunction which is produced between the layers 2 in the active region 3 in the stripe part 7, thereby causing the current to flow only through the active region 3 in the stripe part 7. |
| 公开日期 | 1983-07-12 |
| 申请日期 | 1981-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78591]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO,OOSAKA SHIGEO,HANAMITSU KIYOSHI,et al. Semiconductor light emitting device. JP1983116786A. 1983-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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