Manufacture of semiconductor element
文献类型：专利
| 作者 | JINDOU MASAAKI |
| 发表日期 | 1984-10-15 |
| 专利号 | JP1984181083A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To form a flat active layer having less crystal defect by adding Sn to growing solution containing Te and using N type III-V group compound formed by liquid phase epitaxial grown. CONSTITUTION:A P type GaAs layer 2 is formed by liquid phase epitaxial growth on an N type GaAs substrate 1, selectively etched to form a groove 3 of depth reaching the substrate Then, an N type Al0.4Ga0.6As layer 15, an Al0.12 Ga0.88As active layer 5, a P type Al0.4Ga0.6As layer 6, and a P type GaAs layer 7 are sequentially formed on the substrate by liquid phase epitaxial growth. The solution for growing the layer 15 uses solution which contains Te and Sn added. Thus, the surface of the active layer 15 is formed flat, the layer 5 formed thereon is formed flat, thereby reducing the crystal defect. |
| 公开日期 | 1984-10-15 |
| 申请日期 | 1983-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78593]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | JINDOU MASAAKI. Manufacture of semiconductor element. JP1984181083A. 1984-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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