Semiconductor laser
文献类型：专利
| 作者 | ABE YUJI; OTSUKA KENICHI; SUGIMOTO HIROSHI; OISHI TOSHIYUKI; MATSUI TERUHITO |
| 发表日期 | 1991-07-17 |
| 专利号 | JP1991165087A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a wavelength-variable waveguide integrated semiconductor laser in which changes in a refractive index due to current injection are large by inserting a barrier layer having forbidden band width that is larger than a guide layer into the guide layer of a waveguide region. CONSTITUTION:When a light is emitted, in the case of an active region 10, it is transmitted in an active layer 2 and in the vicinity of its layer and then, in the case of wave-guide region 13, it is transmitted in a guide layer 13, a barrier layer 14, a guide layer II 5 and in the vicinity of these layers in parallel with the direction of these layers respectively. Further, the light generates oscillations by repeating its reflex actions between diffraction gratings in a DBR region 12 and cleavage mirrors in the active region 10. When a positive voltage is applied to a p-side electrode 8 in the DBR region 12, electrons 14 are injected into a guide layer 13 and electron holes 15 are injected into the guide layer 15. And yet, the electrons 14 and the electron holes 15 are separated spacially by a partition in the barrier layer 4. |
| 公开日期 | 1991-07-17 |
| 申请日期 | 1989-11-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78610]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ABE YUJI,OTSUKA KENICHI,SUGIMOTO HIROSHI,et al. Semiconductor laser. JP1991165087A. 1991-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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