Semiconductor laser
文献类型：专利
| 作者 | ISHIGURO NAGATAKA |
| 发表日期 | 1988-01-27 |
| 专利号 | JP1988019890A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To control the thickness and width of an active layer with good reproducibility and to contrive to obtain a transverse mode having unimodal property by forming more than 3 grooves on a substrate. CONSTITUTION:Three grooves having a width of 5mum are formed at intervals of 20 mum in the direction of an N-type InP substrate 1 with a (100) face as its surface using an SiO2 film as a mask and using bromine methanol solution as an etchant. Three layers of a first N-type InP clad layer 2, an InGaAsP active layer 3 and a second P-type InP clad layer 4 are epitaxially grown on this substrate and this structure is formed into a double hetero structure. By such a way, the solute diffusion of the central groove in a liquid phase epitaxial growth is controlled by the positions and widths of the two grooves on the outside, the desired structure can be obtained and by choosing properly the growth condictions, a thick active layer region having the almost the same width as that of the central groove can be formed. |
| 公开日期 | 1988-01-27 |
| 申请日期 | 1986-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78627]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHIGURO NAGATAKA. Semiconductor laser. JP1988019890A. 1988-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。