Manufacture of semiconductor light-emitting device
文献类型：专利
| 作者 | HASHIMOTO TOSHIO |
| 发表日期 | 1985-08-20 |
| 专利号 | JP1985158683A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To prevent the damage of the function of a current constriction path approximately even through a high-temperature heat treatment process by implanting boron ions to a III-V group compound semiconductor element to form the current constriction path. CONSTITUTION:A P type buffer layer 2, a lower clad layer 3, a non-dopped GaAs active layer 4, an upper clad layer 5 and an N type contact layer 6 are grown on a GaAs substrate crystal 1 in succession through an epitaxial growth method, thus obtaining a semiconductor having double hetero-crystal structure. Boron ions are implanted to the surface of the contact layer 6 while using an Au evaporating film 7 patterned to a striped shape as a mask. A high resistance layer 8 is formed to the clad layer 5 and the contact layer 6 through the implantation of boron, and a striped current path 9 is shaped to a section masked with the Au evaporating film 7. A function as a current constriction path is not damaged even when the damage of a crystal is recovered through heat treatment. |
| 公开日期 | 1985-08-20 |
| 申请日期 | 1984-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78629]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | HASHIMOTO TOSHIO. Manufacture of semiconductor light-emitting device. JP1985158683A. 1985-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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