Optical integrated circuit
文献类型：专利
| 作者 | YAMAMOTO ATSUYA; SUGINO TAKASHI; YOSHIKAWA AKIO; NAKAMURA AKIRA; HIROSE MASANORI; KUME MASAHIRO |
| 发表日期 | 1989-08-17 |
| 专利号 | JP1989205491A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated circuit |
| 英文摘要 | PURPOSE:To integrate a plurality of driving FETs onto a chip in approximately the same size as a simple substance of semiconductor laser by forming a semiconductor laser and the driving FETs, laminating them in the direction of crystal growth. CONSTITUTION:Structure in which a semiconductor laser and driving FETs are formed in the direction of crystal growth is shaped. Since both sides of an active layer in width of approximately 3mum are buried with SiO2 having different refractive indices in the semiconductor laser, the semiconductor laser is shaped in an index waveguide type semiconductor laser. An undoped AlzGa1-zAs buffer layer 8 as a high resistance layer is grown onto an uppermost layer in the semiconductor laser, and the active layer 9 in the FET and a laser region are isolated electrically. Since Zn is diffused from the surface to a P-type GaAs contact layer 7 in the laser region, not only the surface and the layer 7 are connected electrically but also no stepped section is formed in the surface of a growth layer. Since a P side electrode in the laser and a drain electrode in the FET are made common, currents made to flow through the laser can changed by controlling voltage applied to gate electrodes 11, 12, thus controlling laser oscillation. Accordingly, an optical logic circuit having one output (laser beams) by two inputs can be prepared. |
| 公开日期 | 1989-08-17 |
| 申请日期 | 1988-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78643]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | YAMAMOTO ATSUYA,SUGINO TAKASHI,YOSHIKAWA AKIO,et al. Optical integrated circuit. JP1989205491A. 1989-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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