Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | SHIMA AKIHIRO |
| 发表日期 | 1991-06-06 |
| 专利号 | JP1991133191A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To enable high output operation and low noise operation, by laminating in order a first lower clad layer of first conductivity type, and a current blocking layer of second conductivity type, and forming an inverse mesa type current constricting trench which penetrates the current blocking layer and reaches the first lower clad layer. CONSTITUTION:By MOCVD (metal organic CVD) method, a first lower clad layer 2 of P-AlxGa1-xAs (x=0.43) and a current blocking layer 3 of N-GaAs are grown in order on a substrate 1; by photolithography, a stripe type etching mask is formed on the current blocking layer 3; by wet etching, a current constricting trench 4 which penetrates the current blocking layer 3 and reaches the clad layer 2 is formed. In this case, the current constricting trench 4 shows an inverse mesa type on account of crystal structure, and the bottom surface of the trench turns to the surface of the clad layer 2. By the effect of the current blocking layer 3 and the current constricting trench 4, effective current concentration into an active region on the current constricting trench 4 is enabled, and confining action of light in the active region can be optimized. Thereby high output operation of high efficiency and low noise can be realized. |
| 公开日期 | 1991-06-06 |
| 申请日期 | 1989-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78647]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SHIMA AKIHIRO. Semiconductor laser device and manufacture thereof. JP1991133191A. 1991-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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