Semiconductor light emitting device
文献类型：专利
| 作者 | WAKAO KIYOHIDE; HANAMITSU KIYOSHI |
| 发表日期 | 1984-04-07 |
| 专利号 | JP1984061086A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To form a semiconductor light emitting device which can perform the tuning or modulation of oscillation frequencies by a method wherein the thickness of th seond clad layer at the second region is made thicker than that at the first region. CONSTITUTION:The first clad layer 2 composed of an N type Ga1-yAlyAs is arranged on a semiconductor substrate 1 composed of an N type GaAs. A Ga1-x AlxAs active layer 3 composed of a P type active region 3A and an N type non-active region 3B is provided thereon. The second clad layer 4 composed of a Ga1-yAlyAs is provided thereon. A P type region 4A is formed on the P type active region 3A, an N type region 4B is formed on the N type non-active region, and the P type region 4A is formed thicker than the N type region 4B. An insulation film 5 and an electrode 8 are formed on the P type region 4B, an electrode 6 is formed on the N type region 4B, and an electrode 7 is formed on the back surface of the semiconductor substrate |
| 公开日期 | 1984-04-07 |
| 申请日期 | 1982-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78649]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE,HANAMITSU KIYOSHI. Semiconductor light emitting device. JP1984061086A. 1984-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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