Semiconductor laser
文献类型：专利
| 作者 | HIRAYAMA NORIYUKI; OSHIMA MASAAKI; HASE NOBUYASU |
| 发表日期 | 1989-05-17 |
| 专利号 | JP1989124280A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To offer a semiconductor laser without an increase in a threshold current due to a leak current component, without a reduction in quantum efficiency, without saturation of an optical output or the like by a method wherein one pair of resonators are removed down to a depth reaching a clad layer of a first conductivity type and an electrode opposite to the first conductivity type is formed on a stripe-shaped clad layer of the first conductivity type at the outside of the exposed resonators. CONSTITUTION:A Ti film is formed on a p-InGaAsP contact layer 16; the p- electrode 16 is etched by making use of the Ti film as a mask by a photolithographic technique in order to form a pattern for resonator formation use; in succession, semiconductor layers situated below a p-InGaAsP contact layer 15 are etched vertically down to a depth reaching an n-InP clad layer 12 by using a dry etching technique. After the Ti film has been removed, AuGe/Au as an n-electrode is provided on the stripe-shaped n-InP clad layer 12 exposed on the etched bottom. Because a resistivity value of an Fe-doped semiinsulating InP substrate 11 is high at 107OMEGA.cm or more, an injected electric current flows to an active layer in a concentrated manner without bypassing both sides of the active layer; a low threshold current can be achieved. |
| 公开日期 | 1989-05-17 |
| 申请日期 | 1987-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78651]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIRAYAMA NORIYUKI,OSHIMA MASAAKI,HASE NOBUYASU. Semiconductor laser. JP1989124280A. 1989-05-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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