Manufacture of semiconductor laser
文献类型：专利
| 作者 | YOSHITOSHI KEIICHI |
| 发表日期 | 1986-05-17 |
| 专利号 | JP1986099396A |
| 著作权人 | SANYO ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser having a block layer with a sufficient thickness readily, by removing the central part of the block layer, which is deposited on a mesa stripe by etching, forming a groove, and providing a first clad layer, an active layer and a second clad layer on the block layer and the groove. CONSTITUTION:On the surface of a first conducting type semiconductor substrate 10, a mesa stripe 11 and a second conducting type block layer 12 are formed by a liquid phase epitaxial growing method. Then only the central part of the block layer, which is deposited on the mesa stripe, is removed by etching. A groove 13 reaching the mesa strip is formed. On the block layer and the groove, a first clad layer 14, an active layer 15 and a second clad layer 16 are sequentially formed. The block layer deposited in this way is thin on the mesa stripe and thick on the other part. The height of the mesa stripe is appropriately determined. Thus the block layer for converging a current, which has a required and sufficient thickness, is obtained. On the mesa stripe, the groove having the sufficiently narrow opening width can be formed readily. |
| 公开日期 | 1986-05-17 |
| 申请日期 | 1984-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78663]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | YOSHITOSHI KEIICHI. Manufacture of semiconductor laser. JP1986099396A. 1986-05-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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