Semiconductor light-emitting element and its manufacture
文献类型：专利
| 作者 | HOSHINA JUNICHI; OGURA MOTOTSUGU |
| 发表日期 | 1990-10-11 |
| 专利号 | JP1990252285A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element and its manufacture |
| 英文摘要 | PURPOSE:To simplify a manufacturing process and to contrive the improvement of productivity by a method wherein a structure having different barriers due to the discontinuity of a band is formed on a substrate in a prescribed process and constriction of a current is efficiently performed. CONSTITUTION:A P-type AlGaAs layer 2 and a P-type GaAs layer 3 are epitaxially grown on a P-type GaAs substrate Then, a stripped mask is formed on both sides of the layer 3 and the central part of the layer 3 is removed by selective etching. A P-type clad layer 4, an active layer 5 and an N-type clad layer 6 are laminated in order on the layer 3 by an MOVPE method to form a double heterostructure and a GaAs contact layer 7 is epitaxially grown. The heterostructure is formed into a structure having a different barriers due to the discontinuity of a band, carriers are concentrated on the part of the small barrier, a current path 10 is formed and as a current 11 is not made to flow, a construction of the current is efficiently performed. Thereby, a manufacturing process is simplified and the manufacturing method of a light-emitting element becomes a method having good productivity. |
| 公开日期 | 1990-10-11 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78667]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSHINA JUNICHI,OGURA MOTOTSUGU. Semiconductor light-emitting element and its manufacture. JP1990252285A. 1990-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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