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文献类型：专利
| 作者 | FURUYAMA HIDETO; UEMATSU YUTAKA |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989055589B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To extremly reduce the absorption loss and the reflection loss of a DBR laser device by a method wherein the active layer located on the region, where a photo waveguide path exists, is formed thinner in thickness than that of the region where no photo waveguide path exists. CONSTITUTION:The photo waveguide path 2 is formed on a semiconductor substrate Subsequently, the first light confinement layer 3, an active layer 4 and the second light confinement layer 5 are grown by crystallization successively. At this time, on the region where a light waveguide path 2 exists, the growing thickness of the crystal growth layer is to be formed thinner due to the characteristics of crystal growth on the convexed part of the substrate. As a result, the active layer is thinly formed on the photo waveguide path, and thickly formed on the other flat surface part. BEsides, the crystal is grown in tapered form on the boundary part of the photo waveguide path of the active layer and on the semiconductor substrate. Then, a current injection part is provided on the flat part where the photo waveguide path and the optical axis will be coincided with each other, thereby enabling to obtain excellent light confinement at the active layer because of the absence of the photo waveguide path on the active region. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1982-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,UEMATSU YUTAKA. -. JP1989055589B2. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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