半導体レ-ザ装置及びその製造方法
文献类型：专利
| 作者 | 島田 直弘 |
| 发表日期 | 1996-03-13 |
| 专利号 | JP2501969B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置及びその製造方法 |
| 英文摘要 | PURPOSE:To enable a semiconductor laser of required characteristics to be obtained high in uniformity and reproducibility and enhanced in reliability by a method wherein a ridge is accurately formed, and a current blocking layer near the ridge concerned is enhanced in crystallinity. CONSTITUTION:Two parallel grooves 32a and 32b are provided by etching to an optical waveguide layer 30 formed on a semiconductor substrate 25, and a comparatively low ridge 33 whose lengthwise direction is the same with those of the grooves 32a and 32b is provided. Thereafter, a current blocking layer 34 and a third clad layer 35 are formed. Therefore, the ridge 33 can be accurately controlled in dimensions such as height, width, and the like, the current block layer 34 can be comparatively easily grown in crystal, and crystal defects are prevented from concentrating on the vicinity of the ridge 33, so that a semiconductor laser possessed of characteristics in an allowable range and enhanced in reliability can be obtained. |
| 公开日期 | 1996-05-29 |
| 申请日期 | 1991-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78679]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 島田 直弘. 半導体レ-ザ装置及びその製造方法. JP2501969B2. 1996-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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