Semiconductor laser device
文献类型：专利
| 作者 | KAWAGUCHI HITOSHI; MATSUOKA TAKASHI; YOSHIKUNI YUZO; NAKANO YOSHINORI; TSUZUKI NOBUYORI |
| 发表日期 | 1987-10-26 |
| 专利号 | JP1987245690A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To perform the single wavelength oscillation easily by a method wherein a resonator is formed by the optical feedback using a diffraction grating to make the refractance percentage at both ends of distribution feedback type semiconductor with 1/4 wavelength shift structure asymmetrical while successively changing the thickness of active layer or guidewave layer in the direction of resonator. CONSTITUTION:An active layer 12, an optical waveguide layer 13 with a diffraction grating including 1/4 wavelength shifting structure are clad with layers 11 and 14. The laser oscillation characteristics of even distribution feedback structure in length L and grating cycle A can be analyzed while the laser with successively changing film thickness is regarded as an even distribution feedback element group of N each, e.g., when the resonator length of 300mum, the coupling coefficient of diffraction grating of 2, the reflectance percentage at laser ends of 90%, 1% and the difference in active layer thickness at both ends of resonator of DELTAd are assumed, if DELTAd =200-300Angstrom , the propagation constant fluctuates specially and the coincidence requirement between the phase at the end of reflectance percentage of 90 % and the phase inlambda/4 shift is relieved while increasing the probability of single axis mode oscillation. In such a constitotion, similar effect can be gained by changing the thickness of optical waveguide layer or active layer and optical waveguide layer in the direction of resonator. |
| 公开日期 | 1987-10-26 |
| 申请日期 | 1986-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78687]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI HITOSHI,MATSUOKA TAKASHI,YOSHIKUNI YUZO,et al. Semiconductor laser device. JP1987245690A. 1987-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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