Semiconductor laser device
文献类型：专利
| 作者 | ARIMOTO AKIRA; KAYANE NAOKI; SAITOU SUSUMU; OSHIMA MASAHIRO; TAKAHASHI TAKEO |
| 发表日期 | 1983-07-02 |
| 专利号 | JP1983111392A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the semiconductor laser device without mode transition and noises therefrom are low, by arranging a thin absorbing layer into a resonator and selectively oscillating only modes using the absorbing layer as a node in resonant wavelengths in the resonator. CONSTITUTION:N-Ga0.6Al0.4As 12, P-Ga0.8Al0.14As 13, P-GA0.6Al0.4As 14 And P GaAs 15 are grown onto an N GaAs substrate 11, AuGeNi-Au 17 is evaporated at the N side and Cr-Au 16 at the P side, one direction is cloven, the direction rectangular to the direction is scribed and cut out, and a GaAlAs double hetero- junction laser chip is formed. One cleavage plane 18 of the laser chip is coated in order of a SiO2 film 19, a Pt metallic film 20 and a SiO2 film 2 Longitudinal modes can be selected by arranging the absorbing layer for selecting wavelengths between both insulating films 19, 2 |
| 公开日期 | 1983-07-02 |
| 申请日期 | 1981-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78697]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | ARIMOTO AKIRA,KAYANE NAOKI,SAITOU SUSUMU,et al. Semiconductor laser device. JP1983111392A. 1983-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。