Semiconductor light emitting device
文献类型：专利
| 作者 | FUJII TOSHIO |
| 发表日期 | 1986-10-06 |
| 专利号 | JP1986224482A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To reduce the thereshold current and increase the light emitting efficiency, by forming the quantum well layer with the atomic plane doping of CONSTITUTION:The quantum well layer (4) with the atomic plane doping of impurity (4b) is formed in the active region. On the N-type GaAs semiconductor substrate 1, for example, the buffer layer 2, confined layer 3, quantum well activelayer 4, confined layer 5 and the contact layer 6 are grown in order. The growth of the active layer 4 is performed as follows: After the GaAs layer 4a of 3mm thickness is grown on the grating region 3b of the N-type confined layer 3 by the As, Ga beams, the Ga beam is stopped; the Si beam is made incident to perform the Si atomic plane doping 4b of about4X10cm surface density, the Si beam is stopped, and again the GaAs layer 4c of 3mm thickness is grown. Thus, the injection efficiency of carrier to the quantum well active layer is increased, and the light emitting recombination is sufficiently performed, so that the reduction of the threshold current and theincrease of light emitting efficiency can be achieved. |
| 公开日期 | 1986-10-06 |
| 申请日期 | 1985-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78699]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | FUJII TOSHIO. Semiconductor light emitting device. JP1986224482A. 1986-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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