Semiconductor laser
文献类型：专利
| 作者 | OSHIMA MASAAKI; HIRAYAMA NORIYUKI |
| 发表日期 | 1988-07-07 |
| 专利号 | JP1988164387A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain an extremely excellent single longitudinal mode laser without forming a partition section by slightly displacing an axis where corresponding to the partition section in the waveguide direction of an active-layer waveguide. CONSTITUTION:A buffer layer 11, p-type InP 4A, n-type InP 4B and n-InGaAsP 4C are grown onto a substrate 10, and a trench in approximately 2mum width is formed through the means of photolithography. The stripe 21 of a photomask is displaced in the direction of approximately 0.25mum from the center at a position where chip length (l) is partitioned into 140mum and 60mum in a photolithographic process at the time of the formation of the trench. Consequently, when the state of an active layer 1 in the trench in a laser is viewed from an upper section, guided beams are reflected partially by edges 8 and 9, and beams for interference are given to overall guided beams. In such structure, the active layer is not parted by a partition section as seen in conventional devices, thus allowing oscillation by extremely low threshold currents and high single longitudinal mode operation. |
| 公开日期 | 1988-07-07 |
| 申请日期 | 1986-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78705]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OSHIMA MASAAKI,HIRAYAMA NORIYUKI. Semiconductor laser. JP1988164387A. 1988-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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