Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; SUYAMA NAOHIRO; YAMAMOTO SABUROU |
| 发表日期 | 1985-11-14 |
| 专利号 | JP1985229389A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To control the distribution of thickness of a clad layer, an optical guide layer, etc. with high accuracy by laminating a striped mesa type polycrystal on multilayer crystal structure with an active layer for oscillating a laser through a thin-film layer for stopping etching. CONSTITUTION:A buffer layer 11', a clad layer 12, an active layer 13, a clad layer 14, an etching stopping layer 15, a clad layer 16 and a cap layer 17 are grown on a substrate 11 in succession, thus forming multilayer crystals for oscillating a laser. Both side sections of the laminated crystals are removed up to the etching stopping layer 15 through etching while using a photo-resist 18 shaped in a striped manner on the cap layer 17 as a mask. The clad layer 14 can be left with high accuracy by interposing the etching stopping layer 15 at that time. An insulating film 19 is applied onto the clad layer 14. Lastly, an electrode 17 is shaped onto the insulating film 19 and the cap layer 17 and an electrode 31 on the back of the substrate 1 |
| 公开日期 | 1985-11-14 |
| 申请日期 | 1984-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78711]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,SUYAMA NAOHIRO,YAMAMOTO SABUROU. Semiconductor laser element. JP1985229389A. 1985-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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