Semiconductor light-emitting device
文献类型：专利
| 作者 | IMAI HAJIME |
| 发表日期 | 1987-06-01 |
| 专利号 | JP1987120095A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain a laser having desirable characteristics and high reliability, by previously forming diffraction gratings on the side faces of an active layer so as to decrease thermal denaturation possible cause during following processes. CONSTITUTION:An n-type InP substrate 1 is first provided with corrugations 5 over the surface thereof. A p-type InP layer 8 is then deposited also over the whole surface. The structure is masked in its region where a V-shaped groove is to be formed, and is anisotropically etched to form a V-shaped groove 9 (a). An n-type InP layer 10, a non-doped InGaAsP layer 11 and a p-type InP layer 12 are deposited in that order over the whole surface. The parts of the layers 10, 11 and 12 deposited within the V-shaped groove 9 constitute clad, active and clad layers, respectively. On the other hand, the side region of the V-shaped groove is provided with a p-n-p-n junction and it has a current blocking function while it also serves as a light confinement layer (b). After that, a p-type InGaAsP layer as a contact layer, a positive electrode 13 and a negative electrode 15 are provided to complete a laser element (c). |
| 公开日期 | 1987-06-01 |
| 申请日期 | 1985-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78713]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME. Semiconductor light-emitting device. JP1987120095A. 1987-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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