Semiconductor laser
文献类型：专利
| 作者 | MATSUDA OSAMU; KANEKO KUNIO |
| 发表日期 | 1984-04-09 |
| 专利号 | JP1984061983A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the light source noise caused by feedback lights by a method wherein a gain guide type structure with narrow stripe due to proton implantation is formed. CONSTITUTION:A first clad layer 12 is epitaxially grown and an active layer 13 is epitaxially grown on the layer 12 and a second clad layer 14 is epitaxially grown on the layer 13 and a cap layer 15 is further epitaxially grown on the layer 14. High resistance regions 16 are formed by selectively implanting proton from the surface of the side whereon the clad layer 14 is formed i.e. the surface of the cap layer 15. The high resistance regions 16 are formed on boeh sides of a stripe part with specified width W extending in one direction and the implanted ends 16a (bottom surfaces) contained in the second clad layer 14 are set up so that the distance from the active layer 13 may be 0.2-0.5mum. These proton implanted regions 16 may be selectively formed by coating the cap layer 15 with e.g. Av mask and the like and implating proton through the cap layer 15. |
| 公开日期 | 1984-04-09 |
| 申请日期 | 1982-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78716]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | MATSUDA OSAMU,KANEKO KUNIO. Semiconductor laser. JP1984061983A. 1984-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。