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文献类型：专利
| 作者 | FURUYAMA HIDETO; OKUDA HAJIME; UEMATSU YUTAKA |
| 发表日期 | 1988-03-15 |
| 专利号 | JP1988011642B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To determine the position of a diffraction grating with a desired period accurately by forming the diffraction grating on striped photoresist, and moving a selective exposure mask and exposing the photoresist. CONSTITUTION:A substrate 1 is coated with positive type photoresist 1 and stripes 2 are formed. The substrate 1 is covered with the selective exposure mask 4 with an exposure window 3 and specific stripes 2 are exposed through the exposure window 3 and exposed to a diffraction grating pattern through interference exposure. Then, the set period of an interference exposure system is varied and the mask 4 is moved to other stripes 2 to perform interference exposure. This operation is repeated to expose all stripes 2; and the substrate 1 is dipped in a specific developer and all stripes 2 are developed. Then, the resulting pattern 5 is used as a mask to perform selective etching, thus integrating and forming plural diffraction gratings with different periods on the same substrate Consequently, directions and positions of postprocessing patterns for the diffraction gratings are made coincident accurately. |
| 公开日期 | 1988-03-15 |
| 申请日期 | 1984-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78725]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,OKUDA HAJIME,UEMATSU YUTAKA. -. JP1988011642B2. 1988-03-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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