Semiconductor laser
文献类型：专利
| 作者 | TSUKADA NORIAKI; TOKUDA YASUKI; FUJIWARA KENZO |
| 发表日期 | 1988-06-08 |
| 专利号 | JP1988136592A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser capable of lowering a threshold and modulating laser oscillation beams at high speed by forming a quantum well active layer, barrier layers, which are shaped on both sides of the quantum well active layer and have thickness through which electrons and holes can be tunneled, and an n-type clad layer aud a p-type Clad layer formed on both sides of the barrier layers. CONSTITUTION:When the energy difference of a quantum level in a quantum well active layer 21 and the bottoms of the conduction bands of AlyGa1-yAs clad layers 23, 24 is represented by E1, a resonance tunnel is generated when applied voltage to the n-AlyGa1-yAs clad layer 23 and the p-AlyGa1-yAs layer 24 reaches 2E1/e in the same manner as a diode. Electron waves intruding into the quantum well active layer 21 are intensified resonantly at that time, and high electron density is attained in the quantum well active layer 21, thus allowing the lowering of the threshold of a laser. Since laser power is increased by the high electron density at the same time, the negative resistance of applied voltage-current characteristics is acquired, and highest oscillation is generated at a bias, where negative resistance is maximized, and the laser power is also modulated at said frequency. |
| 公开日期 | 1988-06-08 |
| 申请日期 | 1986-11-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78732]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TSUKADA NORIAKI,TOKUDA YASUKI,FUJIWARA KENZO. Semiconductor laser. JP1988136592A. 1988-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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