Semiconductor light-emitting element
文献类型：专利
| 作者 | WATABE SHINICHI; TADATOMO KAZUYUKI |
| 发表日期 | 1992-11-06 |
| 专利号 | JP1992316374A |
| 著作权人 | MITSUBISHI CABLE IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To provide high-luminance by forming a GaInP group layer on a ZnSe substrate. CONSTITUTION:A double hetero structure GaInP group layer 14 is formed on a n-ZnSe substrate 10. Here, the GaInP group layer 14 is configured with an n-ZnSe clad layer 11, p-GaInP active layer 12, and a p-ZnSe clad layer 13. Moreover, the GaInP group layer 14 is formed on a ZnSe substrate 10 with a method selected from LPE(liquid phase epitaxial), MBE (molecular ray epitaxial), VPE (vapor phase epitaxial) etc. Therefore, the ZnSe substrate 10 has light- permeability with respect to red light radiation without light-absorption, thereby achieving high-luminance. |
| 公开日期 | 1992-11-06 |
| 申请日期 | 1991-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CABLE IND LTD |
| 推荐引用方式 GB/T 7714 | WATABE SHINICHI,TADATOMO KAZUYUKI. Semiconductor light-emitting element. JP1992316374A. 1992-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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