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文献类型:专利
作者 | YANO MORICHIKA; YAMAMOTO SABURO; KURATA YUKIO; MATSUI KANEKI; HAYAKAWA TOSHIRO; TAKIGUCHI HARUHISA |
发表日期 | 1988-08-25 |
专利号 | JP1988042867B2 |
著作权人 | SHARP KK |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To efficiently oscillate a semiconductor laser element in a basic single mode by forming two stage grooves having different width on the substrate of a double hetero junction semiconductor laser, decreasing the thickness of a clad layer and flattening the active layer. CONSTITUTION:A groove of width W is formed on the substrate 1 of a semiconductor laser formed by laminating a double hetero junction crystalline growth layer, and a groove of width W' is further formed on the bottom a two-stage groove. Thus, since the volume of the groove can be reduced, even if the clad layer 2 is reduced in thickness, the active layer 3 can be flattened. Thus, high order mode can be sufficiently cut off, and the basic mode absorption can be avoided to efficiently oscillate in basic single mode. |
公开日期 | 1988-08-25 |
申请日期 | 1980-03-31 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/78752] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KK |
推荐引用方式 GB/T 7714 | YANO MORICHIKA,YAMAMOTO SABURO,KURATA YUKIO,et al. -. JP1988042867B2. 1988-08-25. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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