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文献类型：专利
| 作者 | MUSHIGAMI MASAHITO; TANAKA HARUO; FUKADA HAYAMIZU |
| 发表日期 | 1989-08-09 |
| 专利号 | JP1989037871B2 |
| 著作权人 | ROHM KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain the title device excellent in electric properties and optical properties by a method wherein a stripe groove where the first upper clad layer is not exposed is formed by etching so as to suitably leave a light absorbtion layer after lamination of the first grown layer of an AlGaAs series semiconductor laser produced by an MBE device, and is then thermally cleaned. CONSTITUTION:After the lower clad layer 21, an active layer 22, the first upper clad layer 23, the light absorption layer 24 made of GaAs and an evaporation preventing layer 25 are successively laminated on the surface of a semiconductor substrate 10, the stripe groove 30 deep enough to leave the light absorption layer 24 and with a desired width is formed by photoetching. Next, the impurity deposited on the surface of the semiconductor substrate having the stripe groove 30 and said layer 24 which has been left are evaporated by thermal cleaning. Thereafter, the second upper clad layer 41 and a cap layer 42 are successively laminated on the surface of the substrate from which said impurity and the left layer 24 have been evaporated. Thereby, the laminated state of the second grown layer 40 can be improved regardless of the value of the Al composition of the first upper clad layer 23. |
| 公开日期 | 1989-08-09 |
| 申请日期 | 1984-08-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78762]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM KK |
| 推荐引用方式 GB/T 7714 | MUSHIGAMI MASAHITO,TANAKA HARUO,FUKADA HAYAMIZU. -. JP1989037871B2. 1989-08-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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