Semiconductor laser device
文献类型：专利
| 作者 | KUME, MASAHIRO; BAN, YUZABURO; HARAFUJI, KENJI; KIDOGUCHI, ISAO; KAMIYAMA, SATOSHI; TSUJIMURA, AYUMU; MIYANAGA, RYOKO; ISHIBASHI, AKIHIKO; HASEGAWA, YOSHIAKI |
| 发表日期 | 2002-10-15 |
| 专利号 | US6466597 |
| 著作权人 | PANNOVA SEMIC, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al0.35Ga0.65N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al0.2Ga0.8N/Al0.25Ga0.75N, a p-type leak barrier layer of p-type Al0.5Ga0.5N0.975P0.025 and a p-type cladding layer of p-type Al0.4Ga0.6N0.98P0.02 are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap. |
| 公开日期 | 2002-10-15 |
| 申请日期 | 1999-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78764]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANNOVA SEMIC, LLC |
| 推荐引用方式 GB/T 7714 | KUME, MASAHIRO,BAN, YUZABURO,HARAFUJI, KENJI,et al. Semiconductor laser device. US6466597. 2002-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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